Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs

Ooi, B.S., Bryce, A.C., Marsh, J.H. and Martin, J. (1994) Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs. Applied Physics Letters, 65(1), pp. 85-87. (doi:10.1063/1.113083)

Full text not currently available from Enlighten.

Abstract

The residual damage in fluorine and boron ion implanted GaAs/AlGaAs has been studied using transmission electron microscopy both before and after rapid thermal processing. The results showed no extended defects in as‐implanted materials. A dense network of interstitial dislocation loops has been observed in boron implanted samples after annealing. Most of these dislocation defects were located in GaAs layers rather than in AlGaAs layers. Only a small number of dislocation loops were found in the fluorine implanted and annealed material. Compared to boron, fluorine is a better candidate for neutral impurity induced disordering applications.

Item Type:Articles
Additional Information:This work is partly supported by the Science and Engineering Research Council (U.K.) under Grant GR/H/82471.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Ooi, B.S., Bryce, A.C., Marsh, J.H., and Martin, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

University Staff: Request a correction | Enlighten Editors: Update this record