Study of reactive ion etching‐induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe

Ooi, B.S., Bryce, A.C., Wilkinson, C.D.W. and Marsh, J.H. (1994) Study of reactive ion etching‐induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe. Applied Physics Letters, 64(5), pp. 598-600. (doi:10.1063/1.111061)

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Abstract

We report the damage distribution induced by C2F6 and SiCl4 reactive ion etching (RIE) using quantum wells and quantum well intermixing (QWI) as probes. Photoluminescence emission at 77 K was measured both before and after rapid thermal annealing at 900 °C for 30 s. Our results show that the QWI probing technique can effectively be utilized as a sensitive probe of RIE damage. A damage depth of 650 Å before annealing and blue shifts of up to 65 meV after annealing were obtained in C2F6 RIE regions. A damage depth of 100 Å and blue shifts of up to 30 meV were observed in SiCl4 RIE regions.

Item Type:Articles
Additional Information:This work was partly supported by the Science and Engineering Research Council (UK) under Grant GR/H/82471.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Wilkinson, Professor Christopher
Authors: Ooi, B.S., Bryce, A.C., Wilkinson, C.D.W., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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