Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion

Gontijo, I., Krauss, T., Marsh, J.H. and De La Rue, R.M. (1994) Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion. IEEE Journal of Quantum Electronics, 30(5), pp. 1189-1195. (doi: 10.1109/3.303680)

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The control of quantum well shapes in GaAs/AlGaAs material after growth has been investigated both theoretically and experimentally. Double quantum well samples capped either by SiO/sub 2/ or fluorides of the group IIA elements were annealed, and energy gap shifts were measured by photoluminescence. These experimental energy shifts were compared to a theoretical model to obtain the diffusion coefficient of aluminum into the quantum wells. Fluorides were found to inhibit the intermixing process almost completely, whereas SiO/sub 2/ is known to enhance it. The aluminum diffusion coefficients for samples annealed at 920/spl deg/C for 30 s are 4.0/spl times/10/sup -17/ cm/sup 2//s and 2.1/spl times/10/sup -15/ cm/sup 2//s for SrF/sub 2/ and SiO/sub 2/ caps, respectively. The activation energies found were 4.09 and 6.40 eV for the same two caps.

Item Type:Articles
Additional Information:This work was supported in part by the Science and Engineering Research Council of the U.K. under Grants GR/H/82471 and GR/F/65248.
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: Gontijo, I., Krauss, T., Marsh, J.H., and De La Rue, R.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Quantum Electronics
ISSN (Online):1558-1713

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