Photoreflectance and photoluminescence of partially intermixed GaAs/AlGaAs double quantum wells

Gontijo, I., Tang, Y.S., De La Rue, R.M. , Sotomayor Torres, C. M., Roberts, J.S. and Marsh, J.H. (1994) Photoreflectance and photoluminescence of partially intermixed GaAs/AlGaAs double quantum wells. Journal of Applied Physics, 76(9), pp. 5434-5438. (doi:10.1063/1.357199)

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Abstract

Photoreflectance and photoluminescence were used to study GaAs/AlGaAs quantum wells (QWs) as they were partially intermixed using SiO2 capped rapid thermal annealing. As the annealing temperature was increased, the experimental photoreflectance results showed spectral features moving to higher energies and merging to form broad peaks. This is explained by changes in the shapes of the originally square wells, which result in a convergence of their subbands around certain energies. The interpretation of these changes showed that the partially intermixed QWs were well described by an error‐function profile.

Item Type:Articles
Additional Information:This work was supported by the Science and Engineering Research Council of the U.K. under Grants No. GR/H/82471, No. GR/H44714, and No. GR/F/65248.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: Gontijo, I., Tang, Y.S., De La Rue, R.M., Sotomayor Torres, C. M., Roberts, J.S., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:AIP Publishing
ISSN:0021-8979
ISSN (Online):1089-7550

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