High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering

McKee, A., McLean, C.J., Bryce, A.C., De La Rue, R.M. , Marsh, J.H. and Button, C. (1994) High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering. Applied Physics Letters, 65(18), pp. 2263-2265. (doi:10.1063/1.112741)

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Abstract

Broad area oxide strip lasers have been fabricated from GaInAs/GaInAsP multiquantum well laser material which has undergone various degrees of intermixing by photoabsorption induced disordering. This process provides an effective way of altering the emission wavelength of lasers fabricated from a single epitaxial wafer, and we have demonstrated blue shifts of up to 160 nm in lasing spectra. The band gap tuned lasers are also assessed in terms of threshold current density, internal quantum efficiency, and internal loss and it is shown that good device performance is maintained.

Item Type:Articles
Additional Information:This work was supported by the Science and Engineering Research Council (UK) under Grant No. GR/G/13488.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: McKee, A., McLean, C.J., Bryce, A.C., De La Rue, R.M., Marsh, J.H., and Button, C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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