Fabrication of photonic integrated circuits using quantum well intermixing

Marsh, J.H. and Bryce, A.C. (1994) Fabrication of photonic integrated circuits using quantum well intermixing. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 28(1-3), pp. 272-278. (doi: 10.1016/0921-5107(94)90063-9)

Abstract

Intermixing the wells and barriers of quantum well structures generally results in an increase in the band gap and is accompanied by changes in the refractive index. A range of techniques, based on impurity diffusion, dielectric capping and laser annealing, have been developed to enhance the quantum well intermixing (QWI) rate in selected areas of a wafer. Such process offer the prospect of a powerful and relatively simple fabrication route for integrating optoelectronic devices and for forming photonic integrated circuits (PICs). Recent progress in QWI techniques is reviewed, concertrating on processes which are compatible with PIC applications, and illustrated with device demonstrators.

• Item Type: Articles
• Additional Information: Financial support was provided by BNR Europe Ltd and by the Science and Engineering Research Council under several grants.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Marsh, J.H., and Bryce, A.C.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
• Publisher: Elsevier
• ISSN: 0921-5107