Lullo, G., Bryce, A.C., McKee, A., Button, C., McLean, C.J. and Marsh, J.H. (1994) Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiquantum well structures. Electronics Letters, 30(19), pp. 1623-1625. (doi: 10.1049/el:19941086)
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Abstract
Electroabsorption optical modulators have been fabricated on GaInAs/GaInAsP multiquantum well structures whose bandgap had been increased by laser photoabsorption-induced disordering. Modulation depths of 20 dB have been obtained in material which has been bandgap blue shifted by as much as 120 nm, while samples shifted by 80 nm gave depths as high as 27 dB.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was supported by the Science and Engineering Research Council (UK) under grant GR/J42090. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Lullo, G., Bryce, A.C., McKee, A., Button, C., McLean, C.J., and Marsh, J.H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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