Hamilton, C.J., Hicks, S.E., Vögele, B., Marsh, J.H. and Aitchison, J.S. (1995) Suppression of bandgap shifts in GaAs/AlGaAs multiquantum wells using hydrogen plasma processing. Electronics Letters, 31(16), pp. 1393-1394. (doi: 10.1049/el:19950911)
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Abstract
A new method of suppressing the intermixing of GaAs/AlGaAs multiple quantum wells is outlined. The technique involves modifying the native surface oxide of gallium arsenide in a hydrogen plasma to form Ga/sub 2/O/sub 3/. The technique is impurity free, reproducible and area selective.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Hamilton, C.J., Hicks, S.E., Vögele, B., Marsh, J.H., and Aitchison, J.S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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