Quantum well intermixing with high spatial selectivity using a pulsed laser technique

McLean, C.J., McKee, A., Lullo, G., Bryce, A.C., De La Rue, R.M. and Marsh, J.H. (1995) Quantum well intermixing with high spatial selectivity using a pulsed laser technique. Electronics Letters, 31(15), pp. 1285-1286. (doi:10.1049/el:19950868)

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Abstract

The authors demonstrate a new quantum well intermixing technique which allows bandgap shifts of typically 100 meV to be realised with a high spatial resolution in a GalnAs/GaInAsP MQW waveguide structure. The material was irradiated with pulses from a Q-switched Nd:YAG laser, and was then subjected to rapid thermal annealing at 700/spl deg/C for several minutes. The spatial resolution of the disordering process was investigated across a masked interface, and was determined to be /spl les/25 /spl mu/m.

Item Type:Articles
Additional Information:Financial support was provided by the Engineering and Physical Sciences Research Council (EPSRC). AMcK is supported by an EPSRC CASE award with the Defence Research Agency (UK).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: McLean, C.J., McKee, A., Lullo, G., Bryce, A.C., De La Rue, R.M., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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