Ooi, B.S., Bryce, A.C. and Marsh, J.H. (1995) Integration process for photonic integrated circuits using plasma damage induced layer intermixing. Electronics Letters, 31(6), pp. 449-451. (doi: 10.1049/el:19950342)
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Abstract
A new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage, has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of the material is still high after intermixing. Losses as low as 18 dB cm/sup -1/ have been measured in the passive waveguides of the extended-cavity lasers.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was supported by the Engineering and Physical Sciences Research Council (UK) under grant GR/H/82471. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Ooi, B.S., Bryce, A.C., and Marsh, J.H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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