Cusumano, P., Marsh, J.H. and Krauss, T. (1995) High extinction ratio GaAs/AlGaAs electroabsorption modulators integrated with passive waveguides using impurity-free vacancy diffusion. Electronics Letters, 31(4), pp. 315-317. (doi: 10.1049/el:19950169)
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Abstract
Electroabsorption optical modulators integrated with passive waveguides have been fabricated on GaAs/AlGaAs multiquantum well material using the impurity-free vacancy diffusion technique with SrF/sub 2/ and SiO/sub 2/ capping layers. At a wavelength of 861.6 nm, devices with a 400 mu m long modulator section showed ON/OFF ratios greater than 35 dB for a reverse bias voltage of 3 V.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was supported by the Engineering and Physical Sciences Research Council under grant GR/H84271. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Cusumano, P., Marsh, J.H., and Krauss, T. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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