Localized Kerr‐type nonlinearities in GaAs/AlGaAs multiple quantum well structures at 1.55 μm

Hamilton, C.J., Marsh, J.H. , Hutchings, D.C. , Aitchison, J.S., Kennedy, G.T. and Sibbett, W. (1996) Localized Kerr‐type nonlinearities in GaAs/AlGaAs multiple quantum well structures at 1.55 μm. Applied Physics Letters, 68(22), pp. 3078-3080. (doi: 10.1063/1.116428)

Abstract

We report the use of a novel impurity free vacancy disordering technique which has been used to produce waveguides with different Kerr‐type nonlinear coefficients. The technique relies on standard SiO2 dielectric caps to promote disordering and Ga2O3 caps to suppress disordering. Band‐gap shifts of around 40 nm and consequent changes in n2 of more than 60% are reported.

• Item Type: Articles
• Additional Information: This work was supported by the EPSRC.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John and Hutchings, Professor David
• Authors: Hamilton, C.J., Marsh, J.H., Hutchings, D.C., Aitchison, J.S., Kennedy, G.T., and Sibbett, W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics Letters
• Publisher: AIP Publishing
• ISSN: 0003-6951
• ISSN (Online): 1077-3118