Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

Cusumano, P., Ooi, B.S., Helmy, A. S., Ayling, S.G., Bryce, A.C., Marsh, J.H. , Voegele, B. and Rose, M.J. (1997) Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer. Journal of Applied Physics, 81(5), pp. 2445-2447. (doi:10.1063/1.364295)

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Abstract

A phosphorus-doped silica (SiO2:P) cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures after rapid thermal processing. The intermixing suppression has been attributed to the fact that SiO2:P is more dense and void free compared with standard SiO2 together with a strain relaxation effect of the cap layer during annealing. Band gap shift differences as large as 100 meV have been observed from samples capped with SiO2 and with SiO2:P. The n-i-p structure showed a higher degree of intermixing compared to p-i-n structure. This behaviour has been attributed to the rise of Fermi level in the n doped structure, through which the formation energy of Ga vacancies is reduced compared to the p doped structure.

Item Type:Articles
Additional Information:P. C. gratefully acknowledges the financial support by the European Community within the frame of the Human Capital and Mobility Program. This work was partially supported by the UK MoD and EPSRC under Grant No. GR/K45968.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Cusumano, P., Ooi, B.S., Helmy, A. S., Ayling, S.G., Bryce, A.C., Marsh, J.H., Voegele, B., and Rose, M.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550

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