Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

Ooi, B.S., Hamilton, C.J., McIlvaney, K., Bryce, A.C., De La Rue, R.M. , Marsh, J.M. and Roberts, J.S. (1997) Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation. IEEE Photonics Technology Letters, 9(5), pp. 587-589. (doi:10.1109/68.588128)

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Abstract

We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well GaAs-AlGaAs laser structures. The process requires neither ion implantation nor the deposition of dielectric caps. Differential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples. Bandgap tuned lasers were fabricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold current compared to as-grown devices.

Item Type:Articles
Additional Information:This work was supported by the Engineering and Physical Sciences Research Council (U.K.) under Grant GR/J42090.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: Ooi, B.S., Hamilton, C.J., McIlvaney, K., Bryce, A.C., De La Rue, R.M., Marsh, J.M., and Roberts, J.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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