High-quality extended cavity ridge lasers fabricated by impurity-free vacancy diffusion with a novel masking technique

Cusumano, P., Marsh, J.H. , Rose, M.J. and Roberts, J.S. (1997) High-quality extended cavity ridge lasers fabricated by impurity-free vacancy diffusion with a novel masking technique. IEEE Photonics Technology Letters, 9(3), pp. 282-284. (doi:10.1109/68.556047)

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Abstract

By using phosphorous doped (5% wt P) silica as masking material and standard silica capping to promote quantum well interdiffusion, GaAs-AlGaAs ridge waveguide QW lasers with integrated transparent waveguides were fabricated. With a selective differential blue-shift of 30 nm in the absorption edge, devices with 400-μm/2.73-mm-long active/passive sections exhibited threshold currents of 8 mA in CW operation, only 1 mA higher than that for normal lasers of the same active length and from the same chip. This 14% increase in threshold current was accompanied by a slope efficiency decrease of 40%. Losses of 3.2 cm/sup -1/ were measured in the passive waveguides at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

Item Type:Articles
Additional Information:This work was supported in part by EPSRC and MoD under Grant GR/K 45968. The work of P. Cusumano was supported by the European Community within the frame of the Human Capital and Mobility program.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Cusumano, P., Marsh, J.H., Rose, M.J., and Roberts, J.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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