Extended cavity ridge waveguide lasers operating at 1.5 [micro sign]m using a simple damage induced quantum well intermixing process

McDougall, S.D., Kowalski, O.P., Bryce, A.C., Marsh, J.H. and Ironside, C.N. (1997) Extended cavity ridge waveguide lasers operating at 1.5 [micro sign]m using a simple damage induced quantum well intermixing process. Electronics Letters, 33(23), pp. 1957-1958. (doi:10.1049/el:19971310)

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Abstract

The authors report extended cavity ridge waveguide lasers in InGaAs-InGaAsP, intermixed by damage induced via a silica sputtering process, with selective intermixing achieved through photoresist masking. Laser threshold currents indicate passive waveguide losses of 4.4 cm/sup -1/.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ironside, Professor Charles and Marsh, Professor John
Authors: McDougall, S.D., Kowalski, O.P., Bryce, A.C., Marsh, J.H., and Ironside, C.N.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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