The electronic structure and optical properties of intermixed GaAs/AlGaAs double quantum wells

Ke, M., Helmy, A. S., Bryce, A.C., Marsh, J.H. , Davidson, J. and Dawson, P. (1998) The electronic structure and optical properties of intermixed GaAs/AlGaAs double quantum wells. Journal of Applied Physics, 84(5), pp. 2855-2857. (doi: 10.1063/1.368444)

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Abstract

We report photoluminescence and photoluminescence excitation (PLE) investigations of intermixed GaAs/AlGaAs double quantum wells. The PLE spectra provide energy information about many different transitions, from which the band profile can be more reliably derived. Using the widely assumed error function profile, it was not possible to explain the observed results. Detailed analysis revealed that the as-grown sample had a graded interface which affected the band profile for the intermixed samples.

Item Type:Articles
Additional Information:The authors would like to acknowledge the financial support from the U. K. Engineering and Physical Sciences Research Council. The U. K. Ministry of Defense is also gratefully acknowledged.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Ke, M., Helmy, A. S., Bryce, A.C., Marsh, J.H., Davidson, J., and Dawson, P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:AIP Publishing
ISSN:0021-8979
ISSN (Online):1089-7550

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