Quantum well intermixing in material systems for 1.5 μm (invited)

Marsh, J.H. , Kowalski, O.P., McDougall, S.D., Qiu, B.C., McKee, A., Hamilton, C.J., De La Rue, R.M. and Bryce, A.C. (1998) Quantum well intermixing in material systems for 1.5 μm (invited). Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 16(2), pp. 810-816. (doi:10.1116/1.581063)

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Abstract

recise control over local optical and electrical characteristics across a semiconductor wafer is a fundamental requirement for the fabrication of photonic integrated circuits. Quantum well intermixing is one approach, where the band gap of a quantum well structure is modified by intermixing the well and barrier layers. Here we report recent progress in the development of intermixing techniques for long wavelength applications, discussing two basic techniques. The first is a class of laser disordering techniques which take place in the solid state. The second is a novel intermixing technique involving plasma induced damage. Both techniques enable large band gap shifts to be achieved in standard GaInAsP multiple quantum well laser structures. The potential of both techniques for photonic integration is further demonstrated by the fabrication and characterisation of extended cavity lasers.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: Marsh, J.H., Kowalski, O.P., McDougall, S.D., Qiu, B.C., McKee, A., Hamilton, C.J., De La Rue, R.M., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Publisher:AIP Publishing
ISSN:0734-2101

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