Helmy, A. S., Aitchison, J. S. and Marsh, J. H. (1998) Quantitative model for the kinetics of compositional intermixing in GaAs-AlGaAs quantum-confined heterostructures. IEEE Journal of Selected Topics in Quantum Electronics, 4(4), pp. 653-660. (doi: 10.1109/2944.720476)
Full text not currently available from Enlighten.
Abstract
A quantitative atomic-scale model for the kinetics of intermixing in GaAs-AlGaAs quantum-confined heterostructures is presented. The model takes into account the statistical nature of the defect diffusion through heterostructures and calculates its effect on the Ga-Al interdiffusion across the associated interfaces. The model has been validated by successfully predicting the observed amounts of bandgap shift induced by the process of hydrogen plasma induced defect layer intermixing, as well as for the process of impurity-free vacancy disordering using SiO/sub 2/ caps. Good agreement between calculated and measured bandgap shifts has been observed. Values of the group-III vacancy diffusion coefficient, where the agreement took place, are between 2 and 3/spl times/exp[-2.72/k/sub B/T] cm/sup 2//spl middot/s/sup -1/.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was supported by the Engineering and Physical Sciences Research Council, by Faculty of Engineering at the University of Glasgow, U.K., by an ORS award scheme in the U.K. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Helmy, A. S., Aitchison, J. S., and Marsh, J. H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Journal of Selected Topics in Quantum Electronics |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 1077-260X |
| ISSN (Online): | 1558-4542 |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details