Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing

Qiu, B.C., Bryce, A.C., De La Rue, R.M. and Marsh, J.H. (1998) Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing. IEEE Photonics Technology Letters, 10(6), pp. 769-771. (doi:10.1109/68.681478)

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Abstract

We report the use of a laser irradiation process, which combines irradiation by continuous wave and Q-switched pulsed Nd:YAG lasers, to promote quantum-well intermixing. Differential shifts up to 70 meV have been obtained in GaInAsP structures. Extended cavity-ridge lasers with 800-μm-long active sections and 1000-μm-long passive sections, were fabricated. The slope efficiency of the extended cavity lasers is very close to that of 800-μm-long all-active lasers, and the threshold current is 10 mA higher than for an 800-μm-long all-active device. The loss in the intermixed single-mode waveguide is 2.1 cm/sup -1/.

Item Type:Articles
Additional Information:This work was supported by the Physical and Engineering Sciences Research Council and the U.K. Ministry of Defence. The work of B.C. Qiu was supported by a studentship under the Sino–British Friendship Scholarship Scheme (SBFSS).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: Qiu, B.C., Bryce, A.C., De La Rue, R.M., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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