Bhattachar-yya, D., Vinokurov, D.A., Gusinskii, G.M., Elyukhin, V.A., Kovalenkov, O.V., Kyutt, R.N., Marsh, J.H. , Naidenov, V.O. and Portnoi, E.L. (1998) Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions. Technical Physics Letters, 24(9), pp. 690-691. (doi: 10.1134/1.1262246)
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Abstract
The photoluminescence spectra of samples of the solid solution In(0.5)Ga(0.5)P before and after implantation of high-energy nitrogen ions to doses of 1011−5×1012 cm−2 shows that the photoluminescence of the implanted (and annealed) samples may be the result of the formation of essentially one-dimensional semiconductor structures along the individual ion tracks.
| Item Type: | Articles |
|---|---|
| Additional Information: | Translated by Steve Torstveit. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Bhattachar-yya, D., Vinokurov, D.A., Gusinskii, G.M., Elyukhin, V.A., Kovalenkov, O.V., Kyutt, R.N., Marsh, J.H., Naidenov, V.O., and Portnoi, E.L. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Technical Physics Letters |
| Publisher: | Nauka/Interperiodica |
| ISSN: | 1063-7850 |
| ISSN (Online): | 1090-6533 |
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