Bandgap tuning of visible laser material

Hamilton, C.J., Kowalski, O.P., McIlvaney, K., Bryce, A.C., Marsh, J.H. and Button, C.C. (1998) Bandgap tuning of visible laser material. Electronics Letters, 34(7), pp. 665-666. (doi: 10.1049/el:19980434)

Full text not currently available from Enlighten.

Abstract

A reliable impurity free technique for quantum well intermixing is reported in the GaInP-AlGaInP material system which has enabled bandgap shifts up to 91 meV to be achieved in standard laser structures. Oxide stripe lasers fabricated from the intermixed material had an emission wavelength of 646 nm compared to a wavelength of 676 nm for as-grown material.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Hamilton, C.J., Kowalski, O.P., McIlvaney, K., Bryce, A.C., Marsh, J.H., and Button, C.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

University Staff: Request a correction | Enlighten Editors: Update this record