A universal damage induced technique for quantum well intermixing

Kowalski, O.P., Hamilton, C.J., McDougall, S.D., Marsh, J.H. , Bryce, A.C., De La Rue, R.M. , Vögele, B., Stanley, C.R., Button, C.C. and Roberts, J.S. (1998) A universal damage induced technique for quantum well intermixing. Applied Physics Letters, 72(5), pp. 581-583. (doi:10.1063/1.120765)

Full text not currently available from Enlighten.

Abstract

We report a novel technique for quantum well intermixing which is simple, reliable and low cost, and appears universally applicable to a wide range of material systems. The technique involves the deposition of a thin layer of sputtered SiO2 and a subsequent high temperature anneal. The deposition process appears to generate point defects at the sample surface, leading to an enhanced intermixing rate and a commensurate reduction in the required anneal temperature. Using appropriate masking it is possible to completely suppress the intermixing process, enabling large differential band gap shifts (over 100 meV) to be obtained across a single wafer.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Stanley, Professor Colin and Marsh, Professor John and De La Rue, Professor Richard
Authors: Kowalski, O.P., Hamilton, C.J., McDougall, S.D., Marsh, J.H., Bryce, A.C., De La Rue, R.M., Vögele, B., Stanley, C.R., Button, C.C., and Roberts, J.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

University Staff: Request a correction | Enlighten Editors: Update this record