Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers

Bhattacharyya, D. et al. (1999) Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers. IEEE Journal of Selected Topics in Quantum Electronics, 5(3), pp. 648-657. (doi: 10.1109/2944.788431)

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The spectral and dynamic properties of InAs-GaAs MOCVD-grown vertically stacked self-organized quantum-dot lasers are studied experimentally. A strong mode grouping effect (quasi-periodic modulation of the lasing spectrum) is observed and interpreted as a result of wavelength-dependent losses in the laser waveguide associated with substrate leakage and reflection. Some samples also display a broader spectral modulation which may be attributed to lasing from different groups of dots, or energy levels. Experimental observations are in agreement with a theoretical explanation involving increased optical nonlinearities due to the localized nature of carriers. In relaxation oscillation pulse trains, a substructure is observed which we believe to be a dynamic manifestation of the same carrier localization effects; a preliminary rate-equation simulation supports this interpretation.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Bhattacharyya, D., Avrutin, E.A., Bryce, A.C., Marsh, J.H., Bimberg, D., Heinrichsdorff, F., Ustinov, V.M., Zaitsev, S.V., Ledentsov, N.N., Kop'ev, P.S., Alferov, Z.I., Onischenko, A.I., and O'Reilly, E.P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Selected Topics in Quantum Electronics
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):1558-4542

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