Selective control of self-organized In[sub 0.5]Ga[sub 0.5]As/GaAs quantum dot properties: quantum dot intermixing

Bhattacharyya, D., Saher Helmy, A., Bryce, A.C., Avrutin, E.A. and Marsh, J.H. (2000) Selective control of self-organized In[sub 0.5]Ga[sub 0.5]As/GaAs quantum dot properties: quantum dot intermixing. Journal of Applied Physics, 88(8), pp. 4619-4622. (doi: 10.1063/1.1311828)

Abstract

Selective postgrowth control of the photoluminescence (PL) wavelength has been demonstrated for a single layer self-organized In0.5Ga0.5As/GaAs quantum dot (QD) structure. This was achieved by rapid thermal processing of dots using different dielectric caps. Selective band gap shifts of over 100 meV were obtained between samples capped with sputtered and plasma enhanced silica deposition, with the band gap shift under regions covered with plasma enhanced chemical vapor deposition SiO2 less than 70 meV. The effects of different caps on the PL linewidth were also observed. The differential band gap shift will enable the integration of passive and active devices in QD systems.

• Item Type: Articles
• Additional Information: D. Bhattacharyya is grateful to the ORS award scheme, CVCP (UK), for financial support. This work was supported by the Engineering and Physical Science Research Council (UK).
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Bhattacharyya, D., Saher Helmy, A., Bryce, A.C., Avrutin, E.A., and Marsh, J.H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Applied Physics
• Publisher: American Institute of Physics
• ISSN: 0021-8979
• ISSN (Online): 1089-7550
• Published Online: 27 September 2000