Multi-wavelength lasers fabricated by an Al layer controlled quantum well intermixing technology

Teng, J.H., Chua, S.J., Huang, Y.H., Li, G., Zhang, Z.H., Helmy, A. S. and Marsh, J.H. (2000) Multi-wavelength lasers fabricated by an Al layer controlled quantum well intermixing technology. Journal of Applied Physics, 88(6), pp. 3458-3462. (doi: 10.1063/1.1289049)

Abstract

We report that the shift in the band gap of Al0.3Ga0.7As/GaAs quantum well structures can be precisely controlled by an Al layer buried between a spin-on silica film and a wet-oxidized GaAs surface. The blueshift in wavelength of the Al0.3Ga0.7As/GaAs quantum well photoluminescence (PL) depends linearly on the thickness of the buried Al layer. By changing the Al layer thickness, the PL peak wavelength can be tuned from 7870 Å for the as-grown sample to 7300 and 7050 Å after 20 and 45 s rapid thermal annealing at 850 °C, respectively. Applying this technology, Al layers with different thickness, i.e., no Al, 200 and 300 Å thick, were applied to the oxidized GaAs surface in three adjacent regions with 200 μm spacing on a quantum well laser structure sample. Three wavelength lasers were successfully fabricated in a single chip by a one step rapid thermal annealing. All the lasers have similar threshold current and slope efficiency.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Teng, J.H., Chua, S.J., Huang, Y.H., Li, G., Zhang, Z.H., Helmy, A. S., and Marsh, J.H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Applied Physics
• Publisher: American Institute of Physics
• ISSN: 0021-8979
• ISSN (Online): 1089-7550
• Published Online: 30 August 2000