GaAs/AlGaAs waveguide pin photodiodes with non-absorbing input facets fabricated by quantum well intermixing

McDougall, S.D., Jubber, M.J., Kowalski, O.P., Marsh, J.H. and Aitchison, J.S. (2000) GaAs/AlGaAs waveguide pin photodiodes with non-absorbing input facets fabricated by quantum well intermixing. Electronics Letters, 36(8), pp. 749-750. (doi:10.1049/el:20000589)

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Abstract

Waveguide photodiodes with non-absorbing input windows have been fabricated using a sputtered silica quantum well intermixing technique. Thermal modelling of the GaAs/AlGaAs photodiodes indicates that facet temperatures can be significantly reduced with window lengths of greater than 10 /spl mu/m. Device testing shows that optical damage occurs at double the power of conventional photodiodes with absorbing facets.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: McDougall, S.D., Jubber, M.J., Kowalski, O.P., Marsh, J.H., and Aitchison, J.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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