McDougall, S.D., Jubber, M.J., Kowalski, O.P., Marsh, J.H. and Aitchison, J.S. (2000) GaAs/AlGaAs waveguide pin photodiodes with non-absorbing input facets fabricated by quantum well intermixing. Electronics Letters, 36(8), pp. 749-750. (doi: 10.1049/el:20000589)
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Abstract
Waveguide photodiodes with non-absorbing input windows have been fabricated using a sputtered silica quantum well intermixing technique. Thermal modelling of the GaAs/AlGaAs photodiodes indicates that facet temperatures can be significantly reduced with window lengths of greater than 10 /spl mu/m. Device testing shows that optical damage occurs at double the power of conventional photodiodes with absorbing facets.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | McDougall, S.D., Jubber, M.J., Kowalski, O.P., Marsh, J.H., and Aitchison, J.S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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