Fabrication of 2 x 2 crosspoint switches using a sputtered SiO2 intermixing technique

Qiu, B.C. et al. (2000) Fabrication of 2 x 2 crosspoint switches using a sputtered SiO2 intermixing technique. IEEE Photonics Technology Letters, 12(3), pp. 287-289. (doi:10.1109/68.826916)

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Abstract

We report the fabrication of a 2×2 crosspoint switch, which monolithically integrates passive waveguides and electroabsorption modulators on one chip, using the sputtered SiO 2 technique for quantum-well intermixing. The static performance of the modulators has been tested, and a modulation depth of 25 dB has been obtained at a wavelength of 1.55 μm for an applied bias of 2 V.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: Qiu, B.C., Qian, Y.H., Kowalski, O.P., Bryce, A.C., Aitchison, J.S., De La Rue, R.M., Marsh, J.H., Owen, M., White, I.H., Penty, R.V., Franzen, A., Hunter, D.K., and Andonovic, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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