Quantum Well Laser Diodes With Slightly-Doped Tunnel Junction

Wang, H., Li, Y., Yu, H., Zhou, X., Chen, W., Pan, J. and Ding, Y. (2018) Quantum Well Laser Diodes With Slightly-Doped Tunnel Junction. In: 2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN), Kolkata, India, 02-04 Feb 2018, ISBN 9781538647998 (doi: 10.1109/WOCN.2018.8556128)

Abstract

We experimentally investigate the electrical and optical characteristics of conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction N++GaAs/undoped-GaAs. The results show that the slightly-doped tunnel junction give significant role on the laser diodes performances in the InGaAs/GaAs quantum well material system. The TJ LD has a internal quantum efficiency of 21% and the loss is 6.9 em -1 , the current threshold is 35 mA, both the lasers are operating at 1.06 μm, but the slightly-doped tunnel junction diode show nonlinear S-shaped current-voltage and broadband lasing characteristics. The results may also lead to the realization of more applications.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Ding, Dr Ying
• Authors: Wang, H., Li, Y., Yu, H., Zhou, X., Chen, W., Pan, J., and Ding, Y.
• College/School: College of Science and Engineering > School of Engineering
• ISSN: 2151-7703
• ISBN: 9781538647998
• Published Online: 03 December 2018
• Copyright Holders: Copyright © 2018 IEEE
• First Published: First published in Proceedings of the 2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy