Non-uniformly doped graded-gap Al(x)Ga(l-)xAs X-ray detectors with high photovoltaic response

Silenas, A., Pozela, J., Smith, K.M., Pozela, K., Jasutis, V., Dapkus, L. and Juciene, V. (2002) Non-uniformly doped graded-gap Al(x)Ga(l-)xAs X-ray detectors with high photovoltaic response. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 487(1-2), 54 -59. (doi: 10.1016/S0168-9002(02)00945-2)

Abstract

Graded-gap AlxGa1-xAs/GaAs X-ray detectors with photovoltaic response have been designed and fabricated. A charge collection efficiency of 100% has been achieved in an AlxGa1-xAs layer with a thickness of 15 mum without application of any bias voltage to the layer. Experimentally, the measured sensitivity achieves 0.9 A/W. Amplification of the photocurrent takes place in the thin (15 mum) AlxGa1-xAs layer, and an efficiency of 5 x 10(5) V/W is attained at an absorbed power of 10(-7) W. The possibilities of using the new detectors for observation of X- ray images are considered.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Smith, Professor Kenway
• Authors: Silenas, A., Pozela, J., Smith, K.M., Pozela, K., Jasutis, V., Dapkus, L., and Juciene, V.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
• Publisher: Elsevier BV
• ISSN: 0168-9002
• ISSN (Online): 1872-9576