Graded-gap AlxGa1-x as X-ray detector with collected charge multiplication

Silenas, A., Pozela, K., Dapkus, L., Jasutis, V., Juciene, V., Pozela, J. and Smith, K.M. (2003) Graded-gap AlxGa1-x as X-ray detector with collected charge multiplication. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 509(1-3), 30 -33. (doi: 10.1016/S0168-9002(03)01544-4)

Abstract

An increase in sensitivity of the graded-gap AlxGa1-As-x/GaAs X-ray detectors is achieved using multiplication of charge generated in a detector body. A thin n-GaAs layer was grown on a narrow-gap side of the AlxGa1-As-x structure. This layer is used as a photoconductor. The multiplication of the charge injected from the graded-gap structure to the photoconductive n-GaAs layer exceeds a few hundred times. This sensitive structure was tested as a detector of single alpha particles (from an Am-241 source).

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Smith, Professor Kenway
• Authors: Silenas, A., Pozela, K., Dapkus, L., Jasutis, V., Juciene, V., Pozela, J., and Smith, K.M.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
• ISSN: 0168-9002
• ISSN (Online): 1872-9576