MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

Medina Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F. and Asenov, A. (2018) MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648124 (doi:10.1109/ULIS.2018.8354758)

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Abstract

As electronic devices approach the nanometer scale, quantum transport theories have been recognized as the best option to reproduce their performance. Other possible trend, mainly focused on reducing the computational effort, is the inclusion of quantum effects in semi-classical simulators. This work presents a comparison between a NEGF simulator and a MS-EMC tool including S/D tunneling both applied on a DGSOI transistor.

Item Type:Conference Proceedings
Additional Information:The authors are grateful for the support given by the Spanish Ministry of Economy, Industry and Competitivity (TEC2014-59730-R and TEC2017-89800-R), H2020 - REMINDER (687931) and H2020 - WAYTOGO-FAST (662175)
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Medina Bailon, Miss Cristina
Authors: Medina Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:2472-9132
ISBN:9781538648124
Copyright Holders:Copyright © 2018 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
702351REMINDERAsen AsenovEuropean Commission (EC)687931ENG - ENGINEERING ELECTRONICS & NANO ENG