Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study

Medina Bailon, C., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2018) Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 301-304. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551707)

Abstract

As device dimensions are scaled down, the use of strained channels as performance booster becomes of special relevance. Moreover, the inclusion of quantum effects in the transport direction is imperative to predict the performance of future transistors. In particular, Source-to-Drain tunneling (S/D tunneling) is presented as a scaling limit in sub-10nm nodes. In this work, a Multi-Subband Ensemble Monte Carlo (MS-EMC) study of the impact of S/D tunneling in relaxed and biaxially strained channel FinFETs is presented.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Medina Bailon, Miss Cristina and Georgiev, Professor Vihar
• Authors: Medina Bailon, C., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V. P., Gamiz, F., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1946-1569
• ISBN: 9781538667910
• Copyright Holders: Copyright © 2018 IEEE
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher