Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. P. , Selberherr, S. and Asenov, A. (2018) Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 297-300. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551630)
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Abstract
In the simulation based research of aggressively scaled CMOS transistors, it is mandatoryto combine advanced transport simulators and quantum confinement effects with atomistic simulations which accurately reproduce the electronic structure at the nanometer scale. This work investigates the impact of cross-section dependent effective masses, obtained from atomistic simulations, on the mobility in Si nanowire transistors (NWTs). For the transport simulations, weuse the Kubo-Greenwood formalism with a set of multisubband phonon, surface roughness, and impurity scattering mechanisms.
| Item Type: | Conference Proceedings |
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| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Carrillo-Nunez, Dr Hamilton and Asenov, Professor Asen and Lee, Jaehyun and Berrada, Dr Salim and Medina Bailon, Miss Cristina and Georgiev, Professor Vihar and Sadi, Dr Toufik |
| Authors: | Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. P., Selberherr, S., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 1946-1569 |
| ISBN: | 9781538667910 |
| Copyright Holders: | Copyright © 2018 IEEE |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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