Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator

Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2019) Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. In: Nikolov, G., Kolkovska, N. and Georgiev, K. (eds.) Numerical Methods and Applications. Series: Lecture Notes in Computer Science, 11189 (11189). Springer, pp. 273-280. ISBN 9783030106911 (doi:10.1007/978-3-030-10692-8_30)

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Abstract

From a modeling point of view, the inclusion of adequate physical phenomena is mandatory when analyzing the behavior of new transistor architectures. In particular, the high electric field across the ultra-thin insulator in aggressively scaled transistors leads to the possibility for the charge carriers in the channel to tunnel through the gate oxide via various gate leakage mechanisms (GLMs). In this work, we study the impact of trap number on gate leakage using the GLM model, which is included in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator for Fully-Depleted Silicon-On-Insulator (FDSOI) field effect transistors (FETs). The GLM code described herein considers both direct and trap-assisted tunneling. This work shows that trap attributes and dynamics can modify the device electrostatic characteristics and even play a significant role in determining the extent of GLMs.

Item Type:Book Sections
Additional Information:9th International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria, August 20 - 24, 2018
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Medina Bailon, Miss Cristina and Georgiev, Dr Vihar and Sadi, Dr Toufik
Authors: Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V., Gamiz, F., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Lecture Notes in Computer Science
Publisher:Springer
ISSN:0302-9743
ISSN (Online):0302-9743
ISBN:9783030106911
Published Online:18 January 2019
Copyright Holders:Copyright © 2019 Springer Nature Switzerland AG
First Published:First published in Lecture Notes in Computer Science 11189:273-280
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
703701SUPERAID7Asen AsenovEuropean Commission (EC)688101ENG - ENGINEERING ELECTRONICS & NANO ENG