Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

Medina Bailon, C., Padilla, J. L., Sadi, T., Sampedro, C., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2019) Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. IEEE Transactions on Electron Devices, 66(3), pp. 1145-1152. (doi:10.1109/TED.2019.2890985)

Medina Bailon, C., Padilla, J. L., Sadi, T., Sampedro, C., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2019) Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. IEEE Transactions on Electron Devices, 66(3), pp. 1145-1152. (doi:10.1109/TED.2019.2890985)

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Abstract

Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLMs) accounting for both direct tunneling and trap-assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multissubband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon-on-insulator, double-gate silicon-on-insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short-channel lengths.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Medina Bailon, Miss Cristina and Georgiev, Dr Vihar and Sadi, Dr Toufik
Authors: Medina Bailon, C., Padilla, J. L., Sadi, T., Sampedro, C., Godoy, A., Donetti, L., Georgiev, V. P., Gamiz, F., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:IEEE
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:18 January 2019
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in IEEE Transactions on Electron Devices 66(3): 1145-1152
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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