NESS: new flexible Nano-Electronic Simulation Software

Berrada, S., Dutta, T. , Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551701)

Abstract

In this paper, we use the Non-Equilibrium Green's Function formalism to study the dependence of the threshold voltage variability on the cross-section shape and the gate length in Junction Less Field Effect Transistors. Each configuration, i.e. gate length and cross-section, was investigated using a statistical ensemble of 100 samples. We found that the variability in threshold voltage is increased independently of the cross-section shape when the gate length isshrunk down to 5 nm. We attribute this results to the higher wave function “randomization” in longer gate lengths.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Dutta, Dr Tapas and Carrillo-Nunez, Dr Hamilton and Asenov, Professor Asen and Lee, Mr Jaehyun and Medina Bailon, Miss Cristina and Berrada, Dr Salim and Duan, Dr Meng and Georgiev, Professor Vihar and Adamu-Lema, Dr Fikru
• Authors: Berrada, S., Dutta, T., Carrillo-Nunez, H., Duan, M., Adamu-Lema, F., Lee, J., Georgiev, V., Medina Bailon, C., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9781538667910
• Copyright Holders: Copyright © 2018 IEEE
• First Published: First published in Proceedings of 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 22-25
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher