Study of irradiated 3D detectors

Roy, P., Pellegrini, G., Al Ajili, A., Bates, R., Haddad, L., Melone, J., O'Shea, V. , Smith, K.M., Wright, V. and Rahman, M. (2003) Study of irradiated 3D detectors. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 509(1-3), 132 -137. (doi: 10.1016/S0168-9002(03)01561-4)

Abstract

The use of the 3D detector geometry, where the electrodes go through the bulk of the semiconductor instead of sitting at the surface, allows the life of semiconductor devices to be extended in harsh radiation environments. This geometry also enables the use of less than optimal, material, i.e. with poorer charge collection efficiency. Three different production methods have been investigated: dry etching, laser machining and photoelectrochemical etching. The electrical characteristics of the resulting test devices made in low resistivity silicon and gallium arsenide have been studied. Some of these 3D detectors were characterised after irradiation by 300 MeV/c pions, up to a fluence of 10(14)pi/cm(2) at the Paul Scherrer Institute, Villigen.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: O'Shea, Professor Val and Melone, Mr John and Smith, Professor Kenway and Bates, Dr Richard
• Authors: Roy, P., Pellegrini, G., Al Ajili, A., Bates, R., Haddad, L., Melone, J., O'Shea, V., Smith, K.M., Wright, V., and Rahman, M.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
• ISSN: 0168-9002
• ISSN (Online): 1872-9576