Wang, C., Cho, S. J., Lee, W. S. and Kim, N. Y. (2013) A novel method for the fabrication of AlGaN/GaN HEMTs on Si (111) substrates. International Journal of Advanced Manufacturing Technology, 67(5-8), pp. 1491-1500. (doi: 10.1007/s00170-012-4583-4)
Full text not currently available from Enlighten.
Abstract
In this paper, the development of a novel manufacturing process is presented for fabricating high-quality AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si (111) substrates. Various material and processing approaches regarding surface passivation, gate oxide, ohmic contact metal, and post-gate annealing are evaluated in terms of device performance. In order to achieve better immunity to current collapse effects, we conducted experiments that investigate the relationship between the AlGaN/GaN HEMTs’ electrical characteristics and different passivation films by plasma-enhanced chemical vapour deposition. In order to obtain a better ohmic contact performance, we tested a Ti/ Al/Ta/Au ohmic contact metallisation scheme using different annealing temperatures and annealing times to achieve a lower contact resistance, a more proper line edge definition, and a better surface morphology. A post-gate N2 rapid thermal annealing method done after the gate metallisation process has shown better DC current–voltage output, transfer characteristics, and gate–drain breakdown voltage results compared to the as-fabricated HEMTs. A HEMT with a 0.5-μm gate length, exhibiting a maximum drain current density of 750 mA/mm, a peak transconductance of 220 mS/mm, a unity-gain cut-off frequency of 24.6 GHz, and a maximum frequency of oscillation of 45.4 GHz, was fabricated using this novel manufacturing process; the X-band power performances demonstrate a 5.8-W/mm output power density and a 51 % power-added efficiency.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Cho, Dr Sung-Jin |
| Authors: | Wang, C., Cho, S. J., Lee, W. S., and Kim, N. Y. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | International Journal of Advanced Manufacturing Technology |
| Publisher: | Springer |
| ISSN: | 0268-3768 |
| ISSN (Online): | 1433-3015 |
| Published Online: | 14 November 2012 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric