Comparison of SiO 2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs

Wang, C., Cho, S.-J. and Kim, N.-Y. (2013) Comparison of SiO 2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs. Microelectronic Engineering, 109, pp. 24-27. (doi: 10.1016/j.mee.2013.03.059)

Abstract

This study investigates and compares AlGaN/GaN high electron mobility transistor s(HEMTs)with three different configurations:an as-fabricated HEMT,aHEMT that uses SiO 2 for surface passivation and a gate oxide that has been deposited using an electron beam (e-beam) evaporation deposited method,and a HEMT that uses SiO 2 for surface passivation and agate oxide that has been deposited using aplasma- enhanced chemical vapor deposition (PECVD)method.The study found that the e-beam-evaporated SiO2 improves maximum saturation current density,peak extrinsic transconductance,and breakdown voltage by 10%,13%,and 6%,respectively,over the performance of the PECVD-deposited SiO 2 HEMT, due to the reduction of the gate leakage current,and this method provides an improvement of 28%, 25%, and 25%over the performance of the regularly fabricated HEMT.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Cho, Dr Sung-Jin
• Authors: Wang, C., Cho, S.-J., and Kim, N.-Y.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Microelectronic Engineering
• Publisher: Elsevier
• ISSN: 0167-9317
• ISSN (Online): 1873-5568
• Published Online: 06 April 2013