Wang, C., Cho, S.-J. and Kim, N. (2013) SU-8-based structural material for microelectronic processing applications. Materials and Manufacturing Processes, 28(8), pp. 947-952. (doi: 10.1080/10426914.2013.792409)
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Abstract
This article presents research on the applications of SU-8-based structural material for three different types of semiconductor processing. The processing method using SU-8 as a cost-effective final protection layer replaces the traditional SiNx or SiO2 thin films in integrated passive devices (IPDs). To evaluate the moisture resistance of the SU-8 films, SU-8 and SiNx are subjected to 1,000 h, 85°C, 85% relative humidity (RH) reverse bias tests and the results are compared. SU-8 is also applied as an isolation layer in light-emitting diode (LED) module fabrication processing, which provides electrical isolation and protection for the ground Cu/Ni/Au-plated metal interconnection. Finally, SU-8 is used in high electron mobility transistor (HEMT) input/output matching circuit as a dielectric layer for the realization of DC block capacitor.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Cho, Dr Sung-Jin |
| Authors: | Wang, C., Cho, S.-J., and Kim, N. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Materials and Manufacturing Processes |
| Publisher: | Taylor & Francis |
| ISSN: | 1042-6914 |
| ISSN (Online): | 1532-2475 |
| Published Online: | 09 July 2013 |
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