Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi:10.3390/mi9120643)

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Abstract

Using a state-of-the-art quantum transport simulator based on the effective mass approximation, we have thoroughly studied the impact of variability on SixGe1−x channel gate-all-around nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) associated with random discrete dopants, line edge roughness, and metal gate granularity. Performance predictions of NWFETs with different cross-sectional shapes such as square, circle, and ellipse are also investigated. For each NWFETs, the effective masses have carefully been extracted from sp3d5s∗ tight-binding band structures. In total, we have generated 7200 transistor samples and performed approximately 10,000 quantum transport simulations. Our statistical analysis reveals that metal gate granularity is dominant among the variability sources considered in this work. Assuming the parameters of the variability sources are the same, we have found that there is no significant difference of variability between SiGe and Si channel NWFETs.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dutta, Dr Tapas and Carrillo-Nunez, Dr Hamilton and Asenov, Professor Asen and Lee, Jaehyun and Berrada, Dr Salim and Medina Bailon, Miss Cristina and Badami, Mr Oves and Adamu-Lema, Dr Fikru and Georgiev, Dr Vihar
Authors: Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Georgiev, V. P., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Micromachines
Publisher:MDPI
ISSN:2072-666X
ISSN (Online):2072-666X
Copyright Holders:Copyright © 2018 The Authors
First Published:First published in Micromachines 9(12):643
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
703701SUPERAID7Asen AsenovEuropean Commission (EC)688101ENG - ENGINEERING ELECTRONICS & NANO ENG
3023770Quantum Simulator for Entangled Electronics (QSEE)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/S001131/1ENG - Electronics & Nanoscale Engineering