Khademhosseini, V., Dideban, D., Ahmadi, M. T., Ismail, R. and Heidari, H. (2018) Impact of hydrogen adsorption on the performance of a single electron transistor utilizing Fullerene quantum dots. ECS Journal of Solid State Science and Technology, 7(11), M191-M194. (doi: 10.1149/2.0281811jss)
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172479.pdf - Accepted Version 963kB |
Abstract
The single electron transistor (SET) is a nanoscale electronic device with fast operation speed. The selection of quantum dot as its island can increase its speed. In this research, fullerene quantum dot is suggested as island of SET and also hydrogen atoms are added to fullerene molecule. Comparison study shows that the number of hydrogen atoms can decrease coulomb blockade and zero current range. Moreover, increasing the number of fullerene quantum dots has an impact on coulomb diamond area, so reliability of SET can be improved. Therefore choosing suitable number of fullerene quantum dots and hydrogen atoms can SET current to a desired value.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Heidari, Professor Hadi |
| Authors: | Khademhosseini, V., Dideban, D., Ahmadi, M. T., Ismail, R., and Heidari, H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | ECS Journal of Solid State Science and Technology |
| Publisher: | Electrochemical Society |
| ISSN: | 2162-8769 |
| ISSN (Online): | 2162-8777 |
| Copyright Holders: | Copyright © 2018 The Electrochemical Society |
| First Published: | First published in ECS Journal of Solid State Science and Technology 7(11):M191-M194 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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