Impact of hydrogen adsorption on the performance of a single electron transistor utilizing Fullerene quantum dots

Khademhosseini, V., Dideban, D., Ahmadi, M. T., Ismail, R. and Heidari, H. (2018) Impact of hydrogen adsorption on the performance of a single electron transistor utilizing Fullerene quantum dots. ECS Journal of Solid State Science and Technology, 7(11), M191-M194. (doi:10.1149/2.0281811jss)

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Abstract

The single electron transistor (SET) is a nanoscale electronic device with fast operation speed. The selection of quantum dot as its island can increase its speed. In this research, fullerene quantum dot is suggested as island of SET and also hydrogen atoms are added to fullerene molecule. Comparison study shows that the number of hydrogen atoms can decrease coulomb blockade and zero current range. Moreover, increasing the number of fullerene quantum dots has an impact on coulomb diamond area, so reliability of SET can be improved. Therefore choosing suitable number of fullerene quantum dots and hydrogen atoms can SET current to a desired value.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Heidari, Dr Hadi
Authors: Khademhosseini, V., Dideban, D., Ahmadi, M. T., Ismail, R., and Heidari, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:ECS Journal of Solid State Science and Technology
Publisher:Electrochemical Society
ISSN:2162-8769
ISSN (Online):2162-8777
Copyright Holders:Copyright © 2018 The Electrochemical Society
First Published:First published in ECS Journal of Solid State Science and Technology 7(11):M191-M194
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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