Random Discrete Dopant Induced Variability in Negative Capacitance Transistors

Dutta, T. , Georgiev, V. and Asenov, A. (2018) Random Discrete Dopant Induced Variability in Negative Capacitance Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi:10.1109/ULIS.2018.8354732)

172322.pdf - Accepted Version



In this work we investigate the impact of random discrete dopants (RDD) induced statistical variability in ferroelectric negative capacitance field effect transistors (NCFETs). We couple the 3D `atomistic' statistical device simulator GARAND with the Landau - Khalatnikov equation of the ferroelectric for this study. We found that the negative capacitance effect provided by the ferroelectric layer can lead to suppression of the RDD induced variability in the threshold voltage (Vt), OFF-current (IOFF), and ON-current (ION). This immunity to RDD induced variability increases with increase in the ferroelectric thickness.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Dutta, Dr Tapas and Georgiev, Dr Vihar
Authors: Dutta, T., Georgiev, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2018 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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