Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A. (2018) Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi:10.1109/ULIS.2018.8354723)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A. (2018) Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi:10.1109/ULIS.2018.8354723)

[img]
Preview
Text
172320.pdf - Accepted Version

1MB

Abstract

The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Lee, Mr James and Carrillo-Nunez, Dr Hamilton and Georgiev, Dr Vihar and Asenov, Professor Asen and Berrada, Dr Salim and Medina Bailon, Miss Cristina
Authors: Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:2472-9132
ISBN:9781538648117
Copyright Holders:Copyright © 2018 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
703701SUPERAID7Asen AsenovEuropean Commission (EC)688101ENG - ENGINEERING ELECTRONICS & NANO ENG