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Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application

Fu, Y.-C., Li, X. , Peralagu, U. , Hemakumara, D., Millar, D. A.J., Steer, M. and Thayne, I. G. (2017) Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application. UK Semiconductors 2017, Sheffield, UK, 12-13 July 2017.

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Abstract

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Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fu, Mr Yen-Chun and Steer, Dr Matthew and Li, Dr Xu and Millar, Mr David and Hemakumara, Miss Dilini and Peralagu, Mr Uthayasankaran
Authors: Fu, Y.-C., Li, X., Peralagu, U., Hemakumara, D., Millar, D. A.J., Steer, M., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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