An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

Abstract

No abstract available.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Dr Xu and Cho, Dr Sung-Jin and Thayne, Prof Iain and Moran, Professor David and Hemakumara, Miss Dilini
• Authors: Li, X., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D., and Thayne, I. G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

Related URLs

• Organisation