An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

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Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Moran, Dr David and Hemakumara, Miss Dilini
Authors: Li, X., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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