Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2017) Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing. 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017 / IC-PLANTS2017), Aichi, Japan, 1-5 March 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2017) Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing. 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017 / IC-PLANTS2017), Aichi, Japan, 1-5 March 2017.

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Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Moran, Dr David and Hemakumara, Miss Dilini and Floros, Mr Konstantinos
Authors: Li, X., Floros, K., Cho, S.-J., Hemakumara, D., Moran, D., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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