Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fu, Mr Yen-Chun and Li, Dr Xu and Cho, Dr Sung-Jin and Thayne, Professor Iain and Smith, Dr Matthew and Moran, Dr David and Hemakumara, Miss Dilini and Floros, Mr Konstantinos and Peralagu, Mr Uthayasankaran
Authors: Li, X., Fu, Y.-C., Peralagu, S., Cho, S., Floros, K., Hemakumara, D., Smith, M., Guiney, I., Moran, D., Humphreys, C., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record