4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D. , Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D. , Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.

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Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Moran, Dr David and Floros, Mr Konstantinos and Hemakumara, Miss Dilini
Authors: Hemakumara, D., Li, X., Floros, K., Cho, S., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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